^products., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mps-u95 (silicon) pnp silicon darlington amplifier transistor . . . designed for amplifier and driver applications. ? high dc current gain ? hpc = 25 000 (min 15.000 (min) ? collector emitter break bvces - 40 vdc (m ? low collector-emitter vce(sat) - 1.5 vdc ? monolithic constructio ? complement to npn m @ic = 200 madc @> ic = 500 madc down voltage - in)@lq= tooyadc saturation voltage - @> 1c = 1.0 adc n for high reliability ps-u45 maximum ratings rating collector-emitter voltage collector-base voltage emitter base voltage collector current -continuous total power dissipation ? ta " 25c derate above 25c total power dissipation @ tc - 25c derate above 25c operating and storage junction temperature range thermal characteristics characteristic thermal resistance,, junction to ambient yh'ermal resistance, junction to case symbol value unit vces *o vdc vqb 50 vdc veb 10 vdc ic 2,0 adc pd 1-0 watt 8.0 mw/c pd 10 watts 80 mw/c tj.tstg -bstotlbo c symbol max unit r6ja 125 c/w r?jc 'i' 12.5 c/w (1) r0ja '* measured with the device soldered into a typical printed circuit board. pnp silicon darlington transistor -c/ - ? a ? pf ?i r? 1 o rc i stvle 1 3 coucctqr mil up eiers a 9 14 9 $j i i .bo 7.24 d \lm us c lit isc k 194 1.13 n; s 41 . 2s. 2 : i.(3 1 &.oti : 2.n i .n 1.14 1 .4 mps-u95 (continued) electrical characteristics (ta - 2sc unleft oth.rw,?a noted) cheractarittic symbol mix unit off characteristics collector-emitter breekijown voltage ?c- 100 uadc, vbe-o) collector-baia breakdown voltage (1c- loouadc, l-o) emitter-bau breakdown voltage he- iqfjadc. lc-0) collector cutoff current (vcb ? 30 vdc. ie - 0) emitter cutoff current (veb - 8.0 vdc. ic ? 0) bvces bvcbo bvebo !c8o 'ebo 40 so 10 ? ~ - - - - ~ - - - 100 100 vdc vdc vdc nadc nadc on characteristics") dc current gain (1c - 200 madc, vce - 50 vdc) (1c - 500 madc. vce * 50 vdc) (1c- i.oadc. vce -5.0 vdcl colltctor-cmitter saturation voltage (1c ? i.oadc. ib - 2.0 madc) base-emitter saturation voltage he- i.oadc, ib - 2.0 madc) bate-emitter on voltage (1c- i.oadc, vce "5.0 vdcl "fe vce(?t) vbe(tat) v8(on) 25.000 16,000 4,000 ? - ~ 43.000 41,000 35,000 1.0 1.85 1.7 150,000 - - 15 2.0 2.0 - vdc vdc vdc dynamic characteristics small-signal current gain m) (1c ? 200 madc. vce * 5.0 vdc. f - 1oo mhz) collector bate capacitance (vcb ? 10 vde' ie ? o. ' ? i.o mhz) l"f?l cob 0.5 - ' 1.6 2.5 - 12 - pf lwtmt: puih width 300 vi, duty cvd>2 0% uniwatt darlington ir.ni.iiorl can be uwd in any number of low power ?pplieatiom, tucn ? relay ariveri. motor control and m general purpoie emplltleri. a> an audio amplifier thrte d?vle... wnen uima ai a complementary pair, can drive 3.5 want into a 3.2 ohm ipeaker uilng a 14 volt tuoply with lera than one per cent distortion becauu ot thehlgn gain tfi* im*e drive requirement i> at low ei 1 ma in thii application. they are alh uieful at power drii/ers for high currant application ?uch tt voltage regulator*.
|
